1. Indlela yokumelwa kwamamaki ensimbi ye-silicon yaseShayina:
(1) Umugqa wensimbi ye-silicon engagoqeki kahle (ishidi)
Indlela yokumelela: Izikhathi eziyi-100 zenani lokulahlekelwa yinsimbi (inani lokulahlekelwa yinsimbi ngesisindo seyunithi ngayinye ngemvamisa engu-50HZ kanye nenani eliphakeme lokungeniswa kwe-sinusoidal magnetic elingu-1.5T.) + Izikhathi eziyi-100 zenani lobukhulu.
Isibonelo, i-DW470-50 imele insimbi ye-silicon engagoqeki ebandayo enenani lokulahlekelwa yinsimbi elingu-4.7w/kg kanye nobukhulu obungu-0.5mm. Imodeli entsha manje imelelwe njenge-50W470.
(2) Umugqa wensimbi ye-silicon oqondiswe ebandayo (ishidi)
Indlela yokumelela: Izikhathi eziyi-100 zenani lokulahlekelwa yinsimbi (inani lokulahlekelwa yinsimbi ngesisindo seyunithi ngayinye ngemvamisa engu-50HZ kanye nenani eliphakeme lokungeniswa kwe-sinusoidal magnetic elingu-1.7T.) + Izikhathi eziyi-100 zenani lokujiya. Ngezinye izikhathi i-G ingezwa ngemva kwenani lokulahlekelwa yinsimbi ukuze kuboniswe ukungeniswa okuphezulu kwe-magnetic.
Isibonelo, i-DQ133-30 imelela umugqa wensimbi ye-silicon oqondiswe ebandayo (ishidi) onenani lokulahlekelwa yinsimbi elingu-1.33 kanye nobukhulu obungu-0.3mm. Imodeli entsha manje imelelwa njengo-30Q133.
(3) Ipuleti lensimbi ye-silicon eligoqiwe elishisayo
Amapuleti ensimbi ye-silicon ashisiwe amelwe yi-DR futhi ahlukaniswe ngensimbi ye-silicon ephansi (okuqukethwe kwe-silicon ≤ 2.8%) kanye nensimbi ye-silicon ephezulu (okuqukethwe kwe-silicon > 2.8%) ngokusho kokuqukethwe kwe-silicon.
Indlela yokumelwa: DR + izikhathi eziyi-100 zenani lokulahlekelwa yinsimbi (inani lokulahlekelwa yinsimbi ngesisindo seyunithi ngayinye lapho inani eliphakeme lokuqina kokungeniswa kwamagnetic nge-magnetization ephindaphindwayo engu-50HZ kanye noshintsho lwe-sinusoidal lingu-1.5T) + izikhathi eziyi-100 zenani lobukhulu. Isibonelo, i-DR510-50 imelela ipuleti lensimbi ye-silicon eligoqwe ngokushisa elinenani lokulahlekelwa yinsimbi elingu-5.1 kanye nobukhulu obungu-0.5mm.
Izinga leshidi lensimbi ye-silicon eligoqwe ngokushisa lezinto zasendlini limelelwa yi-JDR + inani lokulahlekelwa yinsimbi + inani lokujiya, njenge-JDR540-50.
2. Indlela yokumelwa kwamabanga ensimbi ye-silicon yaseJapan:
(1) Umugqa wensimbi ye-silicon ogoqwe ngokubandayo ongagxilile
Yakhiwe ngobukhulu obujwayelekile (inani elandiswe izikhathi eziyi-100) + inombolo yekhodi A + inani eliqinisekisiwe lokulahlekelwa yinsimbi (inani elitholakala ngokwandisa inani lokulahlekelwa yinsimbi izikhathi eziyi-100 lapho imvamisa ingu-50HZ kanti ubukhulu obukhulu be-magnetic flux bungu-1.5T).
Isibonelo, i-50A470 imelela umucu wensimbi ye-silicon engagoqiwe ebandayo enobukhulu obungu-0.5mm kanye nenani eliqinisekisiwe lokulahlekelwa yinsimbi elingu-≤4.7.
(2) Umugqa wensimbi ye-silicon oqondiswe ebandayo
Kusukela kubukhulu obujwayelekile (inani elinwetshiwe izikhathi eziyi-100) + ikhodi G: ekhombisa izinto ezivamile, P: ekhombisa izinto eziqondiswe phezulu + inani eliqinisekisiwe lokulahlekelwa yinsimbi (ukwandisa inani lokulahlekelwa yinsimbi izikhathi eziyi-100 lapho imvamisa ingu-50HZ kanti ubukhulu obukhulu be-magnetic flux buyi-1.7T ngemva kwalokho).
Isibonelo, i-30G130 imelela umucu wensimbi ye-silicon ogoqwe ngokubandayo onobukhulu obungu-0.3mm kanye nenani eliqinisekisiwe lokulahlekelwa yinsimbi elingu-≤1.3.
Isikhathi sokuthunyelwe: Ephreli-09-2024
